stb60N03L-10 n - channel enhancement mode power mos transistor prelimirary data n typical r ds(on) = 0.0085 w n avalanche rugged technology n 100% avalanche tested n repetitive avalanche data at 100 o c n low gate charge n high current capability n 175 o c operating temperature n application oriented characterization n through-hole i2pak (to-262) power package in tube (suffix "-1") n surface-mounting d2pack (to-263) power package in tube (no suffix) or in tape & reel (suffix "t4") applications n high current, high speed switching n solenoid and relay drivers n regulators n dc-dc & dc-ac converters n automotive environment (injection, abs, air-bag, lampdrivers, etc.) internal schematic diagram absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v dgr drain- gate voltage (r gs = 20 k w )30v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 o c60a i d drain current (continuous) at t c = 100 o c42a i dm ( ) drain current (pulsed) 240 a p tot total dissipation at t c = 25 o c 150 w derating factor 1 w/ o c t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ) pulse width limited by safe operating area march 1996 type v dss r ds(on) i d stb60N03L-10 30 v < 0.01 w 60 a 1 2 3 1 3 i2pak to-262 d2pak to-263 1/6
thermal data r thj-case r thj-amb r thj-amb t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 1 62.5 0.5 300 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max, d < 1%) 60 a e as single pulse avalanche energy (starting t j = 25 o c, i d = i ar , v dd = 25 v) 600 mj e ar repetitive avalanche energy (pulse width limited by t j max, d < 1%) 150 mj i ar avalanche current, repetitive or not-repetitive (t c = 100 o c, pulse width limited by t j max, d < 1%) 42 a electrical characteristics (t case = 25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m a v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating x 0.8 t c = 125 o c 250 1000 m a m a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 m a 1 1.7 2.5 v r ds(on) static drain-source on resistance v gs = 10 v i d = 30 a v gs = 10 v i d = 30 a t c = 100 o c v gs = 5 v i d = 30 a t c = 25 o c v gs = 5 v i d = 30 a t c = 100 o c 0.0085 0.0012 0.01 0.02 0.015 0.03 w w w w i d(on) on state drain current v ds > i d(on) x r ds(on)max v gs = 10 v 60 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * ) forward transconductance v ds > i d(on) x r ds(on)max i d = 30 a 30 50 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v f = 1 mhz v gs = 0 3500 1200 450 pf pf pf stb60N03L-10 2/6
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on time rise time v dd = 15 v i d = 38 a r g = 4.7 w v gs = 5 v 40 400 ns ns (di/dt) on turn-on current slope v dd = i d = r g = w v gs = v a/ m s q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 10 v i d = 60 a v gs = 15 v 130 nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd = 24 v i d = 75 a r g = 4.7 w v gs = 5 v (see test circuit, figure 5) 60 240 310 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 60 240 a a v sd ( * ) forward on voltage i sd = 60 a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 75 a di/dt = 10 a/ m s v dd = 0 v t j = 150 o c 100 0.25 5 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ) pulse width limited by safe operating area stb60N03L-10 3/6
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b1 1.2 1.38 0.047 0.054 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 9 9.35 0.354 0.368 e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1.27 1.37 0.050 0.054 l l1 b2 b d e a c2 c a1 l2 e to-262 (i2pak) mechanical data stb60N03L-10 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.3 4.6 0.169 0.181 a1 2.49 2.69 0.098 0.106 b 0.7 0.93 0.027 0.036 b2 1.25 1.4 0.049 0.055 c 0.45 0.6 0.017 0.023 c2 1.21 1.36 0.047 0.053 d 9 9.35 0.354 0.368 e 10 10.28 0.393 0.404 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.37 0.050 0.054 l3 1.4 1.75 0.055 0.068 l2 l3 l b2 b g e a c2 d c a1 to-263 (d2pak) mechanical data stb60N03L-10 5/6
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a . . . stb60N03L-10 6/6
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